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- Manufacturer No：SI2324DS-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI2324DS-T1-GE3
- SKU：245318
- Description：Trans MOSFET N-CH 100V 1.6A 3-Pin SOT-23 T/R
User Guide
User Guide
SI2324DS-T1-GE3 Details
Trans MOSFET N-CH 100V 1.6A 3-Pin SOT-23 T/R
SI2324DS-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Terminations: 3
- Pin Count: 3
- Peak Reflow Temperature (Cel): 260
- Published: 2015
- Time@Peak Reflow Temperature-Max (s): 30
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Rise Time: 10ns
- Subcategory: FET General Purpose Power
- Power Dissipation: 1.25W
- Turn On Delay Time: 6 ns
- Series: TrenchFET?
- Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
- Vgs(th) (Max) @ Id: 2.9V @ 250μA
- Rds On (Max) @ Id, Vgs: 234m Ω @ 1.5A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Radiation Hardening: No
- Terminal Position: DUAL
- Number of Pins: 3
- Terminal Form: GULL WING
- Drain to Source Breakdown Voltage: 100V
- Terminal Finish: Matte Tin (Sn)
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±20V
- Configuration: SINGLE WITH BUILT-IN DIODE
- Turn-Off Delay Time: 10 ns
- Continuous Drain Current (ID): 2.3A
- Fall Time (Typ): 6 ns
- Current - Continuous Drain (Id) @ 25°C: 2.3A Tc
- Power Dissipation-Max: 1.25W Ta 2.5W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 50V
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