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- Manufacturer No：STP80NF12
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STP80NF12
- SKU：4555807
- Description：Trans MOSFET N-CH 120V 80A 3-Pin(3+Tab) TO-220 Tube
User Guide
User Guide
STP80NF12 Details
Trans MOSFET N-CH 120V 80A 3-Pin(3+Tab) TO-220 Tube
STP80NF12 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- JESD-609 Code: e3
- Contact Plating: Tin
- Packaging: Tube
- Number of Pins: 3
- REACH SVHC: No SVHC
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Voltage - Rated DC: 120V
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Package / Case: TO-220-3
- Case Connection: DRAIN
- JEDEC-95 Code: TO-220AB
- Continuous Drain Current (ID): 80A
- Length: 10.4mm
- Vgs(th) (Max) @ Id: 2V @ 250μA
- Resistance: 18mOhm
- Power Dissipation-Max: 300W Tc
- Fall Time (Typ): 115 ns
- Avalanche Energy Rating (Eas): 700 mJ
- Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V
- Turn-Off Delay Time: 134 ns
- Rds On (Max) @ Id, Vgs: 18m Ω @ 40A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Factory Lead Time: 12 Weeks
- Number of Terminations: 3
- Pin Count: 3
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Threshold Voltage: 2V
- Technology: MOSFET (Metal Oxide)
- Drain to Source Breakdown Voltage: 120V
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Power Dissipation: 300W
- Subcategory: FET General Purpose Power
- Current Rating: 80A
- Width: 4.6mm
- Turn On Delay Time: 40 ns
- Height: 15.75mm
- Lifecycle Status: ACTIVE (Last Updated: 8 months ago)
- Current - Continuous Drain (Id) @ 25°C: 80A Tc
- Series: STripFET? II
- Rise Time: 145ns
- Base Part Number: STP80N
- Gate Charge (Qg) (Max) @ Vgs: 189nC @ 10V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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