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IRFIBC20GPBF123
  • Manufacturer No:
    IRFIBC20GPBF
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    253905
  • Description:
    MOSFET N-CH 600V 1.7A TO220FP
  • Quantity:
      • RFQ
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Inventory:1053
  • Qty Unit Price price
  • 1 $3807.572 $3807.572
  • 10 $3769.873 $37698.73
  • 100 $3732.547 $373254.7
  • 1000 $3695.591 $3695591
  • 10000 $3659 $36590000

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IRFIBC20GPBF
  • Manufacturer No:
    IRFIBC20GPBF
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFIBC20GPBF
  • SKU:
    253905
  • Description:
    MOSFET N-CH 600V 1.7A TO220FP

IRFIBC20GPBF Details

MOSFET N-CH 600V 1.7A TO220FP

IRFIBC20GPBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • Number of Channels: 1
  • Radiation Hardening: No
  • Factory Lead Time: 8 Weeks
  • Number of Terminations: 3
  • Pin Count: 3
  • Terminal Finish: Matte Tin (Sn)
  • Published: 2014
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • DS Breakdown Voltage-Min: 600V
  • Threshold Voltage: 2V
  • FET Type: N-Channel
  • Width: 4.83mm
  • Operating Mode: ENHANCEMENT MODE
  • Power Dissipation: 30W
  • JEDEC-95 Code: TO-220AB
  • Fall Time (Typ): 25 ns
  • Turn-Off Delay Time: 30 ns
  • Height: 9.8mm
  • Rise Time: 23 ns
  • Pulsed Drain Current-Max (IDM): 6.8A
  • Power Dissipation-Max: 30W Tc
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Avalanche Energy Rating (Eas): 84 mJ
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Packaging: Tube
  • Number of Pins: 3
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 40
  • REACH SVHC: Unknown
  • Transistor Element Material: SILICON
  • Drain to Source Voltage (Vdss): 600V
  • Gate to Source Voltage (Vgs): 20V
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • Subcategory: FET General Purpose Power
  • Turn On Delay Time: 10 ns
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Continuous Drain Current (ID): 1.7A
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Weight: 6.000006g
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Length: 10.63mm
  • Current - Continuous Drain (Id) @ 25°C: 1.7A Tc
  • Rds On (Max) @ Id, Vgs: 4.4 Ω @ 1A, 10V

Excellent

Based on reviews

Excellent

Based on reviews

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