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- Manufacturer No：STP240N10F7
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STP240N10F7
- SKU：4556530
- Description：MOSFET N-Ch 100V 2.5mOhm 180A STripFET VII
User Guide
User Guide
STP240N10F7 Details
MOSFET N-Ch 100V 2.5mOhm 180A STripFET VII
STP240N10F7 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Radiation Hardening: No
- Packaging: Tube
- Drain to Source Breakdown Voltage: 100V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Power Dissipation: 300W
- Lifecycle Status: ACTIVE (Last Updated: 7 months ago)
- Fall Time (Typ): 40 ns
- Continuous Drain Current (ID): 180A
- Vgs(th) (Max) @ Id: 4.5V @ 250μA
- Current - Continuous Drain (Id) @ 25°C: 180A Tc
- Turn-Off Delay Time: 148 ns
- Rise Time: 108ns
- Rds On (Max) @ Id, Vgs: 3.2m Ω @ 60A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- ECCN Code: EAR99
- Lead Free: Lead Free
- Number of Pins: 3
- Factory Lead Time: 13 Weeks
- Element Configuration: Single
- FET Type: N-Channel
- Operating Temperature: -55°C~175°C TJ
- Package / Case: TO-220-3
- Width: 4.6mm
- Length: 10.4mm
- Height: 15.75mm
- Power Dissipation-Max: 300W Tc
- Turn On Delay Time: 62 ns
- Series: DeepGATE?, STripFET? VII
- Gate Charge (Qg) (Max) @ Vgs: 176nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 12600pF @ 25V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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