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- Manufacturer No：STW19NM50N
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STW19NM50N
- SKU：4568008
- Description：MOSFET POWER MOSFET N-CH 500V 13A
User Guide
User Guide
STW19NM50N Details
MOSFET POWER MOSFET N-CH 500V 13A
STW19NM50N Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Terminations: 3
- Pin Count: 3
- Threshold Voltage: 3V
- Gate to Source Voltage (Vgs): 25V
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 500V
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Subcategory: FET General Purpose Power
- Turn On Delay Time: 12 ns
- Continuous Drain Current (ID): 14A
- Rise Time: 16 ns
- Length: 15.75mm
- Power Dissipation: 110W
- Power Dissipation-Max: 110W Tc
- Current - Continuous Drain (Id) @ 25°C: 14A Tc
- Series: MDmesh? II
- Lifecycle Status: NRND (Last Updated: 8 months ago)
- Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 50V
- Avalanche Energy Rating (Eas): 208 mJ
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Packaging: Tube
- Number of Pins: 3
- REACH SVHC: No SVHC
- Element Configuration: Dual
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Terminal Position: SINGLE
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Temperature: 150°C TJ
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Package / Case: TO-247-3
- Resistance: 250mOhm
- Fall Time (Typ): 17 ns
- Vgs (Max): ±25V
- Pulsed Drain Current-Max (IDM): 56A
- Width: 5.15mm
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
- Height: 20.15mm
- Turn-Off Delay Time: 61 ns
- Rds On (Max) @ Id, Vgs: 250m Ω @ 7A, 10V
- Base Part Number: STW19N
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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