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- Manufacturer No：STP80NF06
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STP80NF06
- SKU：4568954
- Description：MOSFET N-CH 60V 80A TO-220
User Guide
User Guide
STP80NF06 Details
MOSFET N-CH 60V 80A TO-220
STP80NF06 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 3
- Pin Count: 3
- Voltage - Rated DC: 60V
- Terminal Finish: Matte Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Part Status: Not For New Designs
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Package / Case: TO-220-3
- Subcategory: FET General Purpose Power
- Current Rating: 80A
- Fall Time (Typ): 25 ns
- Width: 4.6mm
- Length: 10.4mm
- Weight: 4.535924g
- Power Dissipation-Max: 300W Tc
- Operating Temperature: 175°C TJ
- Rise Time: 85ns
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Lifecycle Status: NRND (Last Updated: 8 months ago)
- Base Part Number: STP80N
- Avalanche Energy Rating (Eas): 870 mJ
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- JESD-609 Code: e3
- Packaging: Tube
- Number of Pins: 3
- REACH SVHC: No SVHC
- Drain to Source Breakdown Voltage: 60V
- Threshold Voltage: 3V
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Power Dissipation: 300W
- JEDEC-95 Code: TO-220AB
- Continuous Drain Current (ID): 80A
- Turn On Delay Time: 25 ns
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Turn-Off Delay Time: 70 ns
- Resistance: 8mOhm
- Current - Continuous Drain (Id) @ 25°C: 80A Tc
- Height: 9.15mm
- Additional Feature: LOW THRESHOLD
- Series: STripFET? II
- Rds On (Max) @ Id, Vgs: 8m Ω @ 40A, 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3850pF @ 25V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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