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  • Manufacturer No:
    STU10NM60N
  • Manufacturer:
    STMicroelectronics
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    STU10NM60N
  • SKU:
    4569247
  • Description:
    MOSFET N-CH 600V 10A IPAK

STU10NM60N Details

MOSFET N-CH 600V 10A IPAK

STU10NM60N Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Number of Terminations: 3
  • Pin Count: 3
  • Peak Reflow Temperature (Cel): 260
  • Threshold Voltage: 3V
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Drain to Source Voltage (Vdss): 600V
  • Terminal Position: SINGLE
  • Operating Temperature: -55°C~150°C TJ
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Terminal Finish: Matte Tin (Sn) - annealed
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Length: 6.6mm
  • Fall Time (Typ): 15 ns
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Height: 6.9mm
  • Turn-Off Delay Time: 32 ns
  • Lifecycle Status: ACTIVE (Last Updated: 8 months ago)
  • Current - Continuous Drain (Id) @ 25°C: 10A Tc
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Power Dissipation-Max: 70W Tc
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 50V
  • Base Part Number: STU10N
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Radiation Hardening: No
  • Packaging: Tube
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Time@Peak Reflow Temperature-Max (s): 30
  • Gate to Source Voltage (Vgs): 25V
  • Transistor Element Material: SILICON
  • DS Breakdown Voltage-Min: 600V
  • Continuous Drain Current (ID): 10A
  • Drain Current-Max (Abs) (ID): 8A
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Factory Lead Time: 26 Weeks
  • Subcategory: FET General Purpose Power
  • Turn On Delay Time: 10 ns
  • Width: 2.4mm
  • Rise Time: 12 ns
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Vgs (Max): ±25V
  • Power Dissipation: 70W
  • Avalanche Energy Rating (Eas): 200 mJ
  • Series: MDmesh? II
  • Drain-source On Resistance-Max: 0.55Ohm
  • Rds On (Max) @ Id, Vgs: 550m Ω @ 4A, 10V

STMicroelectronics — Manufacturer Introduction

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

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