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  • Manufacturer No:
    STD3NK60Z-1
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    4574559
  • Description:
    STMICROELECTRONICS STD3NK60Z-1 Power MOSFET, N Channel, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V
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Inventory:2896
  • Qty Unit Price price
  • 1 $167.54 $167.54
  • 10 $165.881 $1658.81
  • 100 $164.238 $16423.8
  • 1000 $162.611 $162611
  • 10000 $161 $1610000

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  • Manufacturer No:
    STD3NK60Z-1
  • Manufacturer:
    STMicroelectronics
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    STD3NK60Z-1
  • SKU:
    4574559
  • Description:
    STMICROELECTRONICS STD3NK60Z-1 Power MOSFET, N Channel, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V

STD3NK60Z-1 Details

STMICROELECTRONICS STD3NK60Z-1 Power MOSFET, N Channel, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V

STD3NK60Z-1 Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Terminations: 3
  • Pin Count: 3
  • Peak Reflow Temperature (Cel): 260
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Gate to Source Voltage (Vgs): 30V
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Subcategory: FET General Purpose Power
  • Height: 6.2mm
  • Vgs (Max): ±30V
  • Lifecycle Status: ACTIVE (Last Updated: 2 weeks ago)
  • Fall Time (Typ): 14 ns
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Power Dissipation: 45W
  • Pulsed Drain Current-Max (IDM): 9.6A
  • Vgs(th) (Max) @ Id: 4.5V @ 50μA
  • Current - Continuous Drain (Id) @ 25°C: 2.4A Tc
  • Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 311pF @ 25V
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Packaging: Tube
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Time@Peak Reflow Temperature-Max (s): 30
  • Transistor Element Material: SILICON
  • Drain to Source Breakdown Voltage: 600V
  • Part Status: Not For New Designs
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Terminal Finish: Matte Tin (Sn) - annealed
  • Length: 6.6mm
  • Width: 2.4mm
  • Continuous Drain Current (ID): 2.4A
  • Turn On Delay Time: 9 ns
  • Rise Time: 14 ns
  • Turn-Off Delay Time: 19 ns
  • Threshold Voltage: 3.75V
  • Power Dissipation-Max: 45W Tc
  • Series: SuperMESH?
  • Base Part Number: STD3N
  • Rds On (Max) @ Id, Vgs: 3.6 Ω @ 1.2A, 10V

STMicroelectronics — Manufacturer Introduction

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

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