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- Manufacturer No：IRF640
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF640
- SKU：4574859
- Description：MOSFET N-CH 200V 18A TO-220
User Guide
User Guide
IRF640 Details
MOSFET N-CH 200V 18A TO-220
IRF640 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- JESD-609 Code: e3
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Number of Pins: 3
- Lead Free: Contains Lead
- Voltage - Rated DC: 200V
- Terminal Finish: Matte Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Package / Case: TO-220-3
- JEDEC-95 Code: TO-220AB
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Continuous Drain Current (ID): 18A
- Rise Time: 27 ns
- Power Dissipation-Max: 125W Tc
- Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
- Series: MESH OVERLAY?
- Base Part Number: IRF6
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- Part Status: Obsolete
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Pin Count: 3
- Qualification Status: Not Qualified
- Drain to Source Breakdown Voltage: 200V
- Reach Compliance Code: not_compliant
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Operating Temperature: 150°C TJ
- Subcategory: FET General Purpose Power
- Fall Time (Typ): 25 ns
- Current Rating: 18A
- Power Dissipation: 125W
- Pulsed Drain Current-Max (IDM): 72A
- Current - Continuous Drain (Id) @ 25°C: 18A Tc
- Avalanche Energy Rating (Eas): 280 mJ
- Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 25V
- Rds On (Max) @ Id, Vgs: 180m Ω @ 9A, 10V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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