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- Manufacturer No：STF11NM80
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STF11NM80
- SKU：4576831
- Description：MOSFET N-CH 800V 11A TO220FP
User Guide
User Guide
STF11NM80 Details
MOSFET N-CH 800V 11A TO220FP
STF11NM80 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- JESD-609 Code: e3
- Packaging: Tube
- Number of Pins: 3
- REACH SVHC: No SVHC
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Case Connection: ISOLATED
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Terminal Finish: Matte Tin (Sn) - annealed
- Voltage - Rated DC: 800V
- Subcategory: FET General Purpose Power
- Fall Time (Typ): 15 ns
- Current Rating: 11A
- Vgs (Max): ±30V
- Package / Case: TO-220-3 Full Pack
- Power Dissipation: 35W
- Turn On Delay Time: 22 ns
- Height: 9.3mm
- Turn-Off Delay Time: 46 ns
- Additional Feature: ULTRA-LOW RESISTANCE
- Avalanche Energy Rating (Eas): 400 mJ
- Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 25V
- Base Part Number: STF11
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 3
- Pin Count: 3
- Factory Lead Time: 16 Weeks
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 30V
- FET Type: N-Channel
- Threshold Voltage: 4V
- Operating Mode: ENHANCEMENT MODE
- Operating Temperature: -65°C~150°C TJ
- Drain to Source Breakdown Voltage: 800V
- JEDEC-95 Code: TO-220AB
- Width: 4.6mm
- Continuous Drain Current (ID): 11A
- Length: 10.4mm
- Resistance: 400mOhm
- Vgs(th) (Max) @ Id: 5V @ 250μA
- Rise Time: 17 ns
- Pulsed Drain Current-Max (IDM): 44A
- Current - Continuous Drain (Id) @ 25°C: 11A Tc
- Power Dissipation-Max: 35W Tc
- Series: MDmesh?
- Rds On (Max) @ Id, Vgs: 400m Ω @ 5.5A, 10V
- Gate Charge (Qg) (Max) @ Vgs: 43.6nC @ 10V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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