SIHF12N50C-E3Vishay Siliconix
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    SIHF12N50C-E3123
    • Manufacturer No：
      SIHF12N50C-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      350196
    • Description：
      MOSFET N-CH 500V 12A TO-220
    • Quantity：
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    Inventory:855
    • Qty Unit Price price
    • 1 $4.862 $4.862
    • 10 $4.813 $48.13
    • 100 $4.765 $476.5
    • 1000 $4.717 $4717
    • 10000 $4.67 $46700

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    SIHF12N50C-E3
    • Manufacturer No：
      SIHF12N50C-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SIHF12N50C-E3
    • SKU：
      350196
    • Description：
      MOSFET N-CH 500V 12A TO-220

    User Guide

    User Guide

    SIHF12N50C-E3 Details

    MOSFET N-CH 500V 12A TO-220

    SIHF12N50C-E3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Number of Channels: 1
    • Radiation Hardening: No
    • Number of Terminations: 3
    • Pin Count: 3
    • Peak Reflow Temperature (Cel): 260
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • DS Breakdown Voltage-Min: 500V
    • Operating Temperature: -55°C~150°C TJ
    • Case Connection: ISOLATED
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Subcategory: FET General Purpose Power
    • Rise Time: 35 ns
    • Fall Time (Typ): 6 ns
    • Additional Feature: AVALANCHE RATED
    • Vgs(th) (Max) @ Id: 5V @ 250μA
    • Turn-Off Delay Time: 23 ns
    • Current - Continuous Drain (Id) @ 25°C: 12A Tc
    • Power Dissipation-Max: 36W Tc
    • Rds On (Max) @ Id, Vgs: 555m Ω @ 4A, 10V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Pbfree Code: yes
    • Factory Lead Time: 8 Weeks
    • Number of Pins: 3
    • Published: 2016
    • Time@Peak Reflow Temperature-Max (s): 40
    • Transistor Element Material: SILICON
    • Drain to Source Voltage (Vdss): 500V
    • Gate to Source Voltage (Vgs): 30V
    • Packaging: Cut Tape (CT)
    • FET Type: N-Channel
    • Continuous Drain Current (ID): 12A
    • Operating Mode: ENHANCEMENT MODE
    • JEDEC-95 Code: TO-220AB
    • Vgs (Max): ±30V
    • Package / Case: TO-220-3 Full Pack
    • Turn On Delay Time: 18 ns
    • Pulsed Drain Current-Max (IDM): 28A
    • Weight: 6.000006g
    • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1375pF @ 25V
    • Drain-source On Resistance-Max: 0.555Ohm
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