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- Manufacturer No：STF7NM80
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STF7NM80
- SKU：4587526
- Description：MOSFET N-CH 800V 6.5A TO-220FP
User Guide
User Guide
STF7NM80 Details
MOSFET N-CH 800V 6.5A TO-220FP
STF7NM80 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Terminations: 3
- Pin Count: 3
- Factory Lead Time: 16 Weeks
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 30V
- Case Connection: ISOLATED
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Terminal Finish: Matte Tin (Sn) - annealed
- Subcategory: FET General Purpose Power
- Fall Time (Typ): 10 ns
- Turn-Off Delay Time: 35 ns
- Vgs (Max): ±30V
- Continuous Drain Current (ID): 6.5A
- Package / Case: TO-220-3 Full Pack
- Lifecycle Status: ACTIVE (Last Updated: 8 months ago)
- Nominal Vgs: 4 V
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Series: MDmesh?
- Current - Continuous Drain (Id) @ 25°C: 6.5A Tc
- Base Part Number: STF7N
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Packaging: Tube
- Number of Pins: 3
- REACH SVHC: No SVHC
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Power Dissipation: 25W
- Operating Mode: ENHANCEMENT MODE
- Drain to Source Breakdown Voltage: 800V
- JEDEC-95 Code: TO-220AB
- Turn On Delay Time: 20 ns
- Width: 4.6mm
- Length: 10.4mm
- Rise Time: 8 ns
- Vgs(th) (Max) @ Id: 5V @ 250μA
- Pulsed Drain Current-Max (IDM): 26A
- Height: 16.4mm
- Power Dissipation-Max: 25W Tc
- Avalanche Energy Rating (Eas): 240 mJ
- Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
- Rds On (Max) @ Id, Vgs: 1.05 Ω @ 3.25A, 10V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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