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- Manufacturer No：STP300NH02L
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STP300NH02L
- SKU：4593757
- Description：MOSFET N Ch 600V 19A Pwr MESH IGBT
User Guide
User Guide
STP300NH02L Details
MOSFET N Ch 600V 19A Pwr MESH IGBT
STP300NH02L Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Lead Free: Lead Free
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Pin Count: 3
- Drain to Source Breakdown Voltage: 24V
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Power Dissipation: 300W
- JEDEC-95 Code: TO-220AB
- Continuous Drain Current (ID): 120A
- Power Dissipation-Max: 300W Tc
- Current - Continuous Drain (Id) @ 25°C: 120A Tc
- Series: STripFET?
- Turn-Off Delay Time: 138 ns
- Fall Time (Typ): 94.4 ns
- Input Capacitance (Ciss) (Max) @ Vds: 7055pF @ 15V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- Part Status: Obsolete
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Qualification Status: Not Qualified
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Package / Case: TO-220-3
- Subcategory: FET General Purpose Power
- JESD-30 Code: R-PSFM-T3
- Vgs(th) (Max) @ Id: 2V @ 250μA
- Resistance: 2.2MOhm
- Pulsed Drain Current-Max (IDM): 480A
- Rise Time: 275ns
- Avalanche Energy Rating (Eas): 1600 mJ
- Rds On (Max) @ Id, Vgs: 2.2m Ω @ 80A, 10V
- Gate Charge (Qg) (Max) @ Vgs: 109.4nC @ 10V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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