Add to like
Add to project list
123
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:0
- Qty Unit Price price
- 1 $9185.414 $9185.414
- 10 $9094.469 $90944.69
- 100 $9004.424 $900442.4
- 1000 $8915.271 $8915271
- 10000 $8827 $88270000
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：STB21NM60ND
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STB21NM60ND
- SKU：4594780
- Description：MOSFET N-CH 600V 17A D2PAK
User Guide
User Guide
STB21NM60ND Details
MOSFET N-CH 600V 17A D2PAK
STB21NM60ND Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Pin Count: 4
- Terminal Form: GULL WING
- Time@Peak Reflow Temperature-Max (s): 30
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- FET Type: N-Channel
- Threshold Voltage: 4V
- Operating Mode: ENHANCEMENT MODE
- Peak Reflow Temperature (Cel): 245
- JESD-30 Code: R-PSSO-G2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Width: 10.4mm
- Continuous Drain Current (ID): 17A
- Vgs(th) (Max) @ Id: 5V @ 250μA
- Vgs (Max): ±25V
- Power Dissipation: 140W
- Pulsed Drain Current-Max (IDM): 68A
- Current - Continuous Drain (Id) @ 25°C: 17A Tc
- Length: 10.75mm
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
- Base Part Number: STB21N
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- JESD-609 Code: e3
- Part Status: Obsolete
- Number of Pins: 3
- REACH SVHC: No SVHC
- Gate to Source Voltage (Vgs): 25V
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 600V
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Terminal Finish: Matte Tin (Sn) - annealed
- Operating Temperature: 150°C TJ
- Subcategory: FET General Purpose Power
- Height: 4.6mm
- Turn-Off Delay Time: 70 ns
- Turn On Delay Time: 18 ns
- Rise Time: 16 ns
- Resistance: 170mOhm
- Fall Time (Typ): 48 ns
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Power Dissipation-Max: 140W Tc
- Series: FDmesh? II
- Rds On (Max) @ Id, Vgs: 220m Ω @ 8.5A, 10V
Search for similar products
STB21NM60ND Similar Products
The four parts on the right have similar specifications to STMicroelectronics & STB21NM60ND
STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
