Add to like
Add to project list
STB8N65M5123
Inventory:271
  • Qty Unit Price price
  • 1 $3953.257 $3953.257
  • 10 $3914.115 $39141.15
  • 100 $3875.361 $387536.1
  • 1000 $3836.991 $3836991
  • 10000 $3799 $37990000

Not the price you want? Send RFQ Now and we'll contact you ASAP

STB8N65M5
  • Manufacturer No:
    STB8N65M5
  • Manufacturer:
    STMicroelectronics
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    STB8N65M5
  • SKU:
    4534245
  • Description:
    MOSFET N-CH 650V 7A D2PAK

STB8N65M5 Details

MOSFET N-CH 650V 7A D2PAK

STB8N65M5 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Pin Count: 4
  • Terminal Form: GULL WING
  • Time@Peak Reflow Temperature-Max (s): 30
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • FET Type: N-Channel
  • Threshold Voltage: 4V
  • Drain Current-Max (Abs) (ID): 7A
  • Operating Mode: ENHANCEMENT MODE
  • Peak Reflow Temperature (Cel): 245
  • JESD-30 Code: R-PSSO-G2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Turn On Delay Time: 50 ns
  • Height: 4.6mm
  • Width: 10.4mm
  • Rise Time: 14 ns
  • Pulsed Drain Current-Max (IDM): 28A
  • Power Dissipation: 70W
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Additional Feature: ULTRA-LOW RESISTANCE
  • Length: 10.75mm
  • Rds On (Max) @ Id, Vgs: 600m Ω @ 3.5A, 10V
  • Base Part Number: STB8N
  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Mount: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Gate to Source Voltage (Vgs): 25V
  • Transistor Element Material: SILICON
  • Factory Lead Time: 17 Weeks
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Continuous Drain Current (ID): 7A
  • Terminal Finish: Matte Tin (Sn) - annealed
  • Operating Temperature: 150°C TJ
  • Subcategory: FET General Purpose Power
  • Drain to Source Breakdown Voltage: 650V
  • Turn-Off Delay Time: 20 ns
  • Lifecycle Status: ACTIVE (Last Updated: 7 months ago)
  • Fall Time (Typ): 11 ns
  • Vgs(th) (Max) @ Id: 5V @ 250μA
  • Vgs (Max): ±25V
  • Resistance: 560mOhm
  • Current - Continuous Drain (Id) @ 25°C: 7A Tc
  • Power Dissipation-Max: 70W Tc
  • Series: MDmesh? V
  • Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 100V

STMicroelectronics — Manufacturer Introduction

STMicroelectronics
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

Excellent

Based on reviews

Excellent

Based on reviews

LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.
Our social media
We support logistics
We Accept Payment Via