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  • Manufacturer No:
    STP200N4F3
  • Manufacturer:
    STMicroelectronics
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    STP200N4F3
  • SKU:
    4597929
  • Description:
    MOSFET N-CH 40V 120A TO-220

STP200N4F3 Details

MOSFET N-CH 40V 120A TO-220

STP200N4F3 Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Packaging: Tube
  • Pin Count: 3
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Drain to Source Breakdown Voltage: 40V
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature: -55°C~175°C TJ
  • Vgs (Max): ±20V
  • Power Dissipation: 300W
  • Subcategory: FET General Purpose Power
  • JESD-30 Code: R-PSFM-T3
  • Continuous Drain Current (ID): 120A
  • Turn On Delay Time: 19 ns
  • Power Dissipation-Max: 300W Tc
  • Resistance: 3.5mOhm
  • Series: STripFET?
  • Rise Time: 180ns
  • Rds On (Max) @ Id, Vgs: 4.4m Ω @ 80A, 10V
  • Avalanche Energy Rating (Eas): 862 mJ
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Part Status: Obsolete
  • Number of Terminations: 3
  • Terminal Finish: Matte Tin (Sn)
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Package / Case: TO-220-3
  • Case Connection: DRAIN
  • JEDEC-95 Code: TO-220AB
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Turn-Off Delay Time: 90 ns
  • Fall Time (Typ): 65 ns
  • Current - Continuous Drain (Id) @ 25°C: 120A Tc
  • Pulsed Drain Current-Max (IDM): 480A
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
  • Base Part Number: STP200

STMicroelectronics — Manufacturer Introduction

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

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