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- Manufacturer No：STD10NM65N
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STD10NM65N
- SKU：4599516
- Description：MOSFET N-CH 650V 9A DPAK
User Guide
User Guide
STD10NM65N Details
MOSFET N-CH 650V 9A DPAK
STD10NM65N Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Part Status: Obsolete
- Pin Count: 3
- REACH SVHC: No SVHC
- Time@Peak Reflow Temperature-Max (s): 30
- Gate to Source Voltage (Vgs): 25V
- Transistor Element Material: SILICON
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Temperature: 150°C TJ
- Subcategory: FET General Purpose Power
- Length: 6.6mm
- Drain Current-Max (Abs) (ID): 9A
- Turn-Off Delay Time: 50 ns
- Fall Time (Typ): 20 ns
- Height: 2.4mm
- Turn On Delay Time: 12 ns
- Power Dissipation: 90W
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 9A Tc
- Power Dissipation-Max: 90W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 50V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Pins: 3
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Threshold Voltage: 3V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- JESD-30 Code: R-PSSO-G2
- Drain to Source Breakdown Voltage: 650V
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Continuous Drain Current (ID): 9A
- Width: 6.2mm
- Rise Time: 8ns
- Vgs(th) (Max) @ Id: 4V @ 250μA
- JEDEC-95 Code: TO-252AA
- Vgs (Max): ±25V
- Resistance: 480mOhm
- Series: MDmesh? II
- Base Part Number: STD10
- Rds On (Max) @ Id, Vgs: 480m Ω @ 4.5A, 10V
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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