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- Manufacturer No：IRF620
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF620
- SKU：4600489
- Description：MOSFET N-CH 200V 6A TO-220
User Guide
User Guide
IRF620 Details
MOSFET N-CH 200V 6A TO-220
IRF620 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- JESD-609 Code: e3
- Part Status: Obsolete
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Pin Count: 3
- Voltage - Rated DC: 200V
- Terminal Finish: Matte Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Current Rating: 6A
- Continuous Drain Current (ID): 6A
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Operating Temperature: -65°C~150°C TJ
- Package / Case: TO-220-3
- JEDEC-95 Code: TO-220AB
- Rise Time: 30 ns
- Power Dissipation: 70W
- Current - Continuous Drain (Id) @ 25°C: 6A Tc
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Power Dissipation-Max: 70W Tc
- Series: PowerMESH? II
- Rds On (Max) @ Id, Vgs: 800m Ω @ 3A, 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- Lead Free: Lead Free
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Number of Pins: 3
- Qualification Status: Not Qualified
- Drain to Source Breakdown Voltage: 200V
- Reach Compliance Code: not_compliant
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Drain Current-Max (Abs) (ID): 6A
- FET Type: N-Channel
- Threshold Voltage: 4V
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±20V
- Subcategory: FET General Purpose Power
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Pulsed Drain Current-Max (IDM): 24A
- Drain-source On Resistance-Max: 0.8Ohm
- Additional Feature: FAST SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Feedback Cap-Max (Crss): 80 pF
- Base Part Number: IRF6
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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