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- Manufacturer No：STD80N6F6
- Manufacturer：STMicroelectronics
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：STD80N6F6
- SKU：4601969
- Description：Trans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) DPAK T/R
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User Guide
STD80N6F6 Details
Trans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) DPAK T/R
STD80N6F6 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Lead Free: Lead Free
- Number of Pins: 3
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Continuous Drain Current (ID): 80A
- Length: 10.4mm
- Resistance: 5mOhm
- Current - Continuous Drain (Id) @ 25°C: 80A Tc
- Width: 9.35mm
- Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V
- Series: Automotive, AEC-Q101, DeepGATE?, STripFET? VI
- Input Capacitance (Ciss) (Max) @ Vds: 7480pF @ 25V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Channels: 1
- Radiation Hardening: No
- Part Status: Obsolete
- Drain to Source Breakdown Voltage: 60V
- Element Configuration: Single
- FET Type: N-Channel
- Operating Temperature: -55°C~175°C TJ
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Height: 4.6mm
- Power Dissipation: 120W
- Subcategory: FET General Purpose Powers
- Vgs(th) (Max) @ Id: 4.5V @ 250μA
- Power Dissipation-Max: 120W Tc
- Rds On (Max) @ Id, Vgs: 6.5m Ω @ 40A, 10V
- Base Part Number: STD80
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STMicroelectronics — Manufacturer Introduction
STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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