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- Manufacturer No：D45H11
- Manufacturer：MICROSS/On Semiconductor
- Category：Transistors - Bipolar (BJT) - Single
- Datasheet：D45H11
- SKU：8837717
- Description：TO-220 Through Hole Single 3 Bipolar (BJT) Transistor -10A 60mW 40MHz 80V
User Guide
User Guide
D45H11 Details
TO-220 Through Hole Single 3 Bipolar (BJT) Transistor -10A 60mW 40MHz 80V
D45H11 Specification Parameters
- Part Status: Active
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Emitter Base Voltage (VEBO): 5V
- Number of Pins: 3
- REACH SVHC: No SVHC
- Factory Lead Time: 4 Weeks
- DC Current Gain-Min (hFE): 40
- Terminal Finish: Tin (Sn)
- Max Collector Current: 10A
- Collector Emitter Saturation Voltage: 1V
- Transistor Application: SWITCHING
- Gain Bandwidth Product: 40MHz
- Collector Emitter Voltage (VCEO): 80V
- Collector Base Voltage (VCBO): 80V
- Polarity: PNP
- Case Connection: COLLECTOR
- Length: 10.67mm
- Power Dissipation: 60mW
- Voltage - Rated DC: -80V
- Additional Feature: LEADFORM OPTIONS ARE AVAILABLE
- Mount: Through Hole
- RoHS Status: RoHS Compliant
- Pbfree Code: yes
- JESD-609 Code: e3
- Min Operating Temperature: -55°C
- Number of Terminations: 3
- Pin Count: 3
- Contact Plating: Lead, Tin
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Max Operating Temperature: 150°C
- Element Configuration: Single
- hFE Min: 60
- Width: 4.83mm
- Frequency: 40MHz
- Transition Frequency: 40MHz
- Collector Emitter Breakdown Voltage: 80V
- Max Breakdown Voltage: 80V
- Subcategory: Other Transistors
- Height: 16.51mm
- Package / Case: TO-220
- Max Power Dissipation: 60mW
- Weight: 1.8g
- Current Rating: -10A
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