SiCrystal, a subsidiary of the Rom Group, has signed a new agreement with STMicroelectronics to expand the supply of silicon carbide substrates

Maggie April 23, 2024

On April 22nd, Rom and STMicroelectronics announced that they will continue to expand their cooperation based on the long-term supply agreement between Rom Semiconductor and SiCrystal, a subsidiary of Rom Group, for 150mm (6-inch) silicon carbide (SiC) substrate wafers.

According to the newly signed long-term supply agreement, SiCrystal will increase its supply of silicon carbide substrate wafers produced in Nuremberg, Germany, to STMicroelectronics. The estimated total price of the agreement is not less than 230 million US dollars.

Geoff West, Executive Vice President and Chief Procurement Officer of STMicroelectronics, said, "Signing an expansion supply agreement with SiCrystal will help ST obtain more 150mm (6-inch) SiC substrate wafers to promote our silicon carbide chip production capacity and better meet the needs of global automotive and industrial customers. The new agreement will also balance the supply ratio inside and outside ST, strengthen our supply chain resilience, and better respond to future demand growth."

Dr. Robert Eckstein, President and CEO of SiCrystal, a subsidiary of the Rom Group, said, "SiCrystal is a subsidiary of the Rom Group and has many years of experience in manufacturing silicon carbide substrate wafers. We are delighted to renew the agreement with our long-term customer ST and expand our cooperation. We will continue to support our partners in expanding their silicon carbide business, continuously increasing the production of 6-inch SiC substrate wafers while ensuring product quality is always reliable."