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- Manufacturer No：AOI4N60
- Manufacturer：Alpha & Omega Semiconductor
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：AOI4N60
- SKU：1478294
- Description：MOSFET N-CH 600V 4A TO251A
User Guide
User Guide
AOI4N60 Details
MOSFET N-CH 600V 4A TO251A
AOI4N60 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Packaging: Tube
- Pin Count: 3
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Factory Lead Time: 18 Weeks
- DS Breakdown Voltage-Min: 600V
- Drain Current-Max (Abs) (ID): 4A
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Configuration: SINGLE WITH BUILT-IN DIODE
- Vgs (Max): ±30V
- Vgs(th) (Max) @ Id: 4.5V @ 250μA
- Package / Case: TO-251-3 Stub Leads, IPak
- Power Dissipation-Max: 104W Tc
- Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
- Rds On (Max) @ Id, Vgs: 2.3 Ω @ 2A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Number of Terminations: 3
- Published: 2011
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 600V
- Terminal Position: SINGLE
- Continuous Drain Current (ID): 4A
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Subcategory: FET General Purpose Power
- JESD-30 Code: R-PSIP-T3
- Current - Continuous Drain (Id) @ 25°C: 4A Tc
- Operating Temperature: -50°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
- JEDEC-95 Code: TO-251A
- Avalanche Energy Rating (Eas): 235 mJ
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