AOI2N60
Alpha & Omega Semiconductor
Part Status
ActiveRoHS Status
ROHS3 CompliantMoisture Sensitivity Level (MSL)
1 (Unlimited)Mounting Type
Through HoleMount
Through HoleNumber of Elements
1Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIEDPeak Reflow Temperature (Cel)
NOT SPECIFIEDPackaging
TubeNumber of Terminations
3Pin Count
3Published
2011Drive Voltage (Max Rds On,Min Rds On)
10VTransistor Element Material
SILICONFactory Lead Time
18 WeeksDrain to Source Voltage (Vdss)
600VDS Breakdown Voltage-Min
600VTerminal Position
SINGLEDrain Current-Max (Abs) (ID)
2AContinuous Drain Current (ID)
2APulsed Drain Current-Max (IDM)
8AFET Type
N-ChannelTechnology
MOSFET (Metal Oxide)Transistor Application
SWITCHINGOperating Mode
ENHANCEMENT MODEConfiguration
SINGLE WITH BUILT-IN DIODESubcategory
FET General Purpose PowerVgs (Max)
±30VJESD-30 Code
R-PSIP-T3Vgs(th) (Max) @ Id
4.5V @ 250μAPackage / Case
TO-251-3 Stub Leads, IPakOperating Temperature
-50°C~150°C TJGate Charge (Qg) (Max) @ Vgs
11nC @ 10VCurrent - Continuous Drain (Id) @ 25°C
2A TcAvalanche Energy Rating (Eas)
120 mJInput Capacitance (Ciss) (Max) @ Vds
325pF @ 25VPower Dissipation-Max
56.8W TcRds On (Max) @ Id, Vgs
4.4 Ω @ 1A, 10V