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ZXMN3F31DN8TA123
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ZXMN3F31DN8TA
  • Manufacturer No:
    ZXMN3F31DN8TA
  • Manufacturer:
    Diodes Incorporated
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    ZXMN3F31DN8TA
  • SKU:
    1756285
  • Description:
    Dual N-Channel 30 V 0.024 Ohm Surface Mount Enhancement Mode MOSFET - SOP-8

ZXMN3F31DN8TA Details

Dual N-Channel 30 V 0.024 Ohm Surface Mount Enhancement Mode MOSFET - SOP-8

ZXMN3F31DN8TA Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Number of Channels: 2
  • Mount: Surface Mount
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Terminations: 8
  • Terminal Form: GULL WING
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 40
  • Published: 2008
  • Length: 5mm
  • Gate to Source Voltage (Vgs): 20V
  • Width: 4mm
  • Package / Case: 8-SOIC (0.154, 3.90mm Width)
  • Operating Mode: ENHANCEMENT MODE
  • Subcategory: FET General Purpose Power
  • Fall Time (Typ): 8 ns
  • FET Feature: Logic Level Gate
  • Max Power Dissipation: 1.8W
  • Resistance: 24mOhm
  • Drain Current-Max (Abs) (ID): 5.7A
  • Rise Time: 3.3 ns
  • Weight: 73.992255mg
  • Rds On (Max) @ Id, Vgs: 24m Ω @ 7A, 10V
  • RoHS Status: ROHS3 Compliant
  • Number of Elements: 2
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Number of Pins: 8
  • Pin Count: 8
  • REACH SVHC: No SVHC
  • Terminal Finish: Matte Tin (Sn)
  • Element Configuration: Dual
  • Transistor Element Material: SILICON
  • Factory Lead Time: 17 Weeks
  • Drain to Source Breakdown Voltage: 30V
  • Operating Temperature: -55°C~150°C TJ
  • Transistor Application: SWITCHING
  • Height: 1.5mm
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • Vgs(th) (Max) @ Id: 3V @ 250μA
  • Turn-Off Delay Time: 16 ns
  • FET Type: 2 N-Channel (Dual)
  • Continuous Drain Current (ID): 7.3A
  • Current - Continuous Drain (Id) @ 25°C: 5.7A
  • Turn On Delay Time: 2.9 ns
  • Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V

Diodes Incorporated — Manufacturer Introduction

Diodes Incorporated
Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.

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