IXTP1R6N50PIXYS
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    IXTP1R6N50P123
    • Manufacturer No：
      IXTP1R6N50P
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      3896865
    • Description：
      MOSFET N-CH 500V 1.6A TO-220
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    IXTP1R6N50P
    • Manufacturer No：
      IXTP1R6N50P
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IXTP1R6N50P
    • SKU：
      3896865
    • Description：
      MOSFET N-CH 500V 1.6A TO-220

    User Guide

    User Guide

    IXTP1R6N50P Details

    MOSFET N-CH 500V 1.6A TO-220

    IXTP1R6N50P Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Pbfree Code: yes
    • Lead Free: Lead Free
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Number of Terminations: 3
    • Pin Count: 3
    • REACH SVHC: No SVHC
    • Threshold Voltage: 5.5V
    • Current Rating: 1A
    • Transistor Element Material: SILICON
    • Voltage - Rated DC: 500V
    • Gate to Source Voltage (Vgs): 30V
    • Operating Temperature: -55°C~150°C TJ
    • Technology: MOSFET (Metal Oxide)
    • Pulsed Drain Current-Max (IDM): 2.5A
    • Package / Case: TO-220-3
    • JEDEC-95 Code: TO-220AB
    • Vgs (Max): ±30V
    • Additional Feature: AVALANCHE RATED
    • Fall Time (Typ): 23 ns
    • Series: PolarHV?
    • Avalanche Energy Rating (Eas): 75 mJ
    • Current - Continuous Drain (Id) @ 25°C: 1.6A Tc
    • Vgs(th) (Max) @ Id: 5.5V @ 25μA
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Packaging: Tube
    • Number of Pins: 3
    • Qualification Status: Not Qualified
    • Terminal Finish: Matte Tin (Sn)
    • Published: 2006
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Drain to Source Breakdown Voltage: 500V
    • Part Status: Discontinued
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Case Connection: DRAIN
    • Continuous Drain Current (ID): 1.6A
    • Turn-Off Delay Time: 45 ns
    • Rise Time: 26 ns
    • Power Dissipation: 43W
    • Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
    • Power Dissipation-Max: 43W Tc
    • Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
    • Rds On (Max) @ Id, Vgs: 6.5 Ω @ 500mA, 10V
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