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- Manufacturer No：IXFV96N15P
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXFV96N15P
- SKU：3909984
- Description：Trans MOSFET N-CH 150V 96A 3-Pin(3+Tab) PLUS 220
User Guide
User Guide
IXFV96N15P Details
Trans MOSFET N-CH 150V 96A 3-Pin(3+Tab) PLUS 220
IXFV96N15P Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Through Hole
- Number of Elements: 1
- ECCN Code: EAR99
- Part Status: Obsolete
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Pins: 3
- Qualification Status: Not Qualified
- Published: 2006
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Pulsed Drain Current-Max (IDM): 250A
- Power Dissipation: 480W
- Continuous Drain Current (ID): 96A
- Turn-Off Delay Time: 66 ns
- Rise Time: 33ns
- Power Dissipation-Max: 480W Tc
- Additional Feature: AVALANCHE ENERGY RATED
- Series: PolarHT? HiPerFET?
- Rds On (Max) @ Id, Vgs: 24m Ω @ 500mA, 10V
- Packaging: Bulk
- Mount: Through Hole
- RoHS Status: RoHS Compliant
- Pbfree Code: yes
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Number of Terminations: 3
- Pin Count: 3
- Drain to Source Breakdown Voltage: 150V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- JESD-609 Code: e1
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Case Connection: DRAIN
- Fall Time (Typ): 18 ns
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Drain-source On Resistance-Max: 0.024Ohm
- Avalanche Energy Rating (Eas): 1000 mJ
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Package / Case: TO-220-3, Short Tab
- Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
- Current - Continuous Drain (Id) @ 25°C: 96A Tc
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