IXGF32N170IXYS
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    IXGF32N170123
    • Manufacturer No：
      IXGF32N170
    • Manufacturer：
      IXYS
    • Category：
      Transistors - IGBTs - Single
    • Datasheet：
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    • SKU：
      3912976
    • Description：
      IXYS SEMICONDUCTOR IXGF32N170 IGBT Single Transistor, 44 A, 3.5 V, 200 W, 1.7 kV, ISOPLUS i4-PAC, 3 Pins
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    IXGF32N170
    • Manufacturer No：
      IXGF32N170
    • Manufacturer：
      IXYS
    • Category：
      Transistors - IGBTs - Single
    • Datasheet：
      IXGF32N170
    • SKU：
      3912976
    • Description：
      IXYS SEMICONDUCTOR IXGF32N170 IGBT Single Transistor, 44 A, 3.5 V, 200 W, 1.7 kV, ISOPLUS i4-PAC, 3 Pins

    User Guide

    User Guide

    IXGF32N170 Details

    IXYS SEMICONDUCTOR IXGF32N170 IGBT Single Transistor, 44 A, 3.5 V, 200 W, 1.7 kV, ISOPLUS i4-PAC, 3 Pins

    IXGF32N170 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • ECCN Code: EAR99
    • Lead Free: Lead Free
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Packaging: Tube
    • Number of Pins: 3
    • Qualification Status: Not Qualified
    • Published: 2008
    • Element Configuration: Single
    • Gate-Emitter Voltage-Max: 20V
    • Operating Temperature: -55°C~150°C TJ
    • Case Connection: ISOLATED
    • Power Dissipation: 200W
    • Polarity: NPN
    • Current - Collector Pulsed (Icm): 200A
    • Fall Time-Max (tf): 500 ns
    • Turn On Time: 90 ns
    • Max Collector Current: 44A
    • Collector Emitter Breakdown Voltage: 1.7kV
    • Turn Off Time-Nom (toff): 920 ns
    • Base Part Number: IXG*32N170
    • Gate Charge: 146nC
    • Switching Energy: 10.6mJ (off)
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Pbfree Code: yes
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Gate-Emitter Thr Voltage-Max: 5V
    • Number of Terminations: 3
    • Pin Count: 3
    • REACH SVHC: No SVHC
    • Transistor Element Material: SILICON
    • Input Type: Standard
    • Collector Emitter Saturation Voltage: 2.7V
    • JESD-609 Code: e1
    • Max Power Dissipation: 200W
    • Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
    • Factory Lead Time: 28 Weeks
    • Transistor Application: POWER CONTROL
    • Subcategory: Insulated Gate BIP Transistors
    • IGBT Type: NPT
    • Voltage - Collector Emitter Breakdown (Max): 1700V
    • Collector Emitter Voltage (VCEO): 1.7kV
    • Package / Case: i4-Pac?-5 (3 Leads)
    • Td (on/off) @ 25°C: 45ns/270ns
    • Test Condition: 1020V, 32A, 2.7 Ω, 15V
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