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- Manufacturer No：IXGX120N60A3
- Manufacturer：IXYS
- Category：Transistors - IGBTs - Single
- Datasheet：IXGX120N60A3
- SKU：3896166
- Description：IGBT 600V 200A 780W PLUS247
User Guide
User Guide
IXGX120N60A3 Details
IGBT 600V 200A 780W PLUS247
IXGX120N60A3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Pbfree Code: yes
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Gate-Emitter Thr Voltage-Max: 5V
- Number of Terminations: 3
- Pin Count: 3
- Reach Compliance Code: unknown
- Transistor Element Material: SILICON
- Input Type: Standard
- Collector Emitter Voltage (VCEO): 600V
- Operating Temperature: -55°C~150°C TJ
- Collector Emitter Saturation Voltage: 1.2V
- Polarity/Channel Type: N-CHANNEL
- Package / Case: TO-247-3
- Terminal Finish: TIN SILVER COPPER
- Subcategory: Insulated Gate BIP Transistors
- IGBT Type: PT
- Max Power Dissipation: 780W
- Series: GenX3?
- Turn On Time: 123 ns
- Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Lead Free: Lead Free
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Packaging: Tube
- Number of Pins: 3
- Qualification Status: Not Qualified
- Published: 2009
- Element Configuration: Single
- Collector Emitter Breakdown Voltage: 600V
- Gate-Emitter Voltage-Max: 20V
- JESD-609 Code: e1
- Factory Lead Time: 30 Weeks
- Max Collector Current: 200A
- Case Connection: COLLECTOR
- Transistor Application: POWER CONTROL
- Current - Collector Pulsed (Icm): 600A
- Power Dissipation: 780W
- Additional Feature: LOW CONDUCTION LOSS
- Turn Off Time-Nom (toff): 830 ns
- Base Part Number: IXG*120N60
- Switching Energy: 2.7mJ (on), 6.6mJ (off)
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