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- Manufacturer No：IXTP12N50P
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXTP12N50P
- SKU：3896620
- Description：MOSFET N-CH 500V 12A TO-220
User Guide
User Guide
IXTP12N50P Details
MOSFET N-CH 500V 12A TO-220
IXTP12N50P Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Pbfree Code: yes
- Lead Free: Lead Free
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Pin Count: 3
- Terminal Finish: Matte Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 500V
- Factory Lead Time: 24 Weeks
- Power Dissipation: 200W
- Current Rating: 12A
- Transistor Application: SWITCHING
- Package / Case: TO-220-3
- Subcategory: FET General Purpose Power
- Fall Time (Typ): 20 ns
- Turn-Off Delay Time: 55 ns
- Drain-source On Resistance-Max: 0.5Ohm
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Avalanche Energy Rating (Eas): 600 mJ
- Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 25V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- JESD-609 Code: e3
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Number of Pins: 3
- Qualification Status: Not Qualified
- Published: 2006
- Transistor Element Material: SILICON
- Voltage - Rated DC: 500V
- Gate to Source Voltage (Vgs): 30V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Continuous Drain Current (ID): 12A
- Operating Mode: ENHANCEMENT MODE
- Case Connection: DRAIN
- JEDEC-95 Code: TO-220AB
- Additional Feature: AVALANCHE RATED
- Rise Time: 27 ns
- Current - Continuous Drain (Id) @ 25?°C: 12A Tc
- Power Dissipation-Max: 200W Tc
- Operating Temperature: -55?°C~150?°C TJ
- Vgs (Max): ?±30V
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