IXTQ200N075TIXYS
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    IXTQ200N075T123
    • Manufacturer No：
      IXTQ200N075T
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      3912640
    • Description：
      MOSFET N-CH 75V 200A TO-3P
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    IXTQ200N075T
    • Manufacturer No：
      IXTQ200N075T
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IXTQ200N075T
    • SKU：
      3912640
    • Description：
      MOSFET N-CH 75V 200A TO-3P

    User Guide

    User Guide

    IXTQ200N075T Details

    MOSFET N-CH 75V 200A TO-3P

    IXTQ200N075T Specification Parameters

    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • RoHS Status: RoHS Compliant
    • Pbfree Code: yes
    • Part Status: Obsolete
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Number of Terminations: 3
    • Pin Count: 3
    • Terminal Finish: Matte Tin (Sn)
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Case Connection: DRAIN
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Package / Case: TO-3P-3, SC-65-3
    • Turn-Off Delay Time: 54 ns
    • Power Dissipation: 430W
    • Pulsed Drain Current-Max (IDM): 540A
    • Rise Time: 57ns
    • Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
    • Power Dissipation-Max: 430W Tc
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Packaging: Tube
    • Number of Pins: 3
    • Qualification Status: Not Qualified
    • Published: 2006
    • Transistor Element Material: SILICON
    • Drain to Source Breakdown Voltage: 75V
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Continuous Drain Current (ID): 200A
    • Additional Feature: AVALANCHE RATED
    • Drain-source On Resistance-Max: 0.005Ohm
    • Fall Time (Typ): 52 ns
    • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
    • Avalanche Energy Rating (Eas): 750 mJ
    • Current - Continuous Drain (Id) @ 25°C: 200A Tc
    • Rds On (Max) @ Id, Vgs: 5m Ω @ 25A, 10V
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