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- Manufacturer No：IXTY1N100P
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXTY1N100P
- SKU：3896233
- Description：MOSFET N-CH 1000V 1A TO-252
User Guide
User Guide
IXTY1N100P Details
MOSFET N-CH 1000V 1A TO-252
IXTY1N100P Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Packaging: Tube
- Terminal Form: GULL WING
- Published: 2008
- Continuous Drain Current (ID): 1A
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Factory Lead Time: 24 Weeks
- Drain to Source Breakdown Voltage: 1kV
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Drain to Source Voltage (Vdss): 1000V
- Case Connection: DRAIN
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Additional Feature: AVALANCHE RATED
- JEDEC-95 Code: TO-252AA
- Power Dissipation-Max: 50W Tc
- Vgs(th) (Max) @ Id: 4.5V @ 50μA
- Series: Polar?
- Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
- Rds On (Max) @ Id, Vgs: 15 Ω @ 500mA, 10V
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- JESD-609 Code: e3
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Pin Count: 4
- Qualification Status: Not Qualified
- Terminal Finish: Matte Tin (Sn)
- Drain Current-Max (Abs) (ID): 1A
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Power Dissipation: 50W
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- JESD-30 Code: R-PSSO-G2
- Subcategory: FET General Purpose Power
- Pulsed Drain Current-Max (IDM): 1.8A
- Turn-Off Delay Time: 55 ns
- Fall Time (Typ): 24 ns
- Rise Time: 26ns
- Avalanche Energy Rating (Eas): 100 mJ
- Current - Continuous Drain (Id) @ 25°C: 1A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 331pF @ 25V
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