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- Manufacturer No：BC848CE6433HTMA1
- Manufacturer：Infineon
- Category：Transistors - Bipolar (BJT) - Single
- Datasheet：BC848CE6433HTMA1
- SKU：2656499
- Description：Trans GP BJT NPN 30V 0.1A T/R
User Guide
User Guide
BC848CE6433HTMA1 Details
Trans GP BJT NPN 30V 0.1A T/R
BC848CE6433HTMA1 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Lead Free: Lead Free
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Terminal Position: DUAL
- Number of Pins: 3
- Terminal Form: GULL WING
- Transistor Element Material: SILICON
- Voltage - Rated DC: 30V
- Collector Emitter Voltage (VCEO): 30V
- Max Breakdown Voltage: 30V
- Emitter Base Voltage (VEBO): 6V
- Max Collector Current: 100mA
- Width: 1.3mm
- Transistor Type: NPN
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Transition Frequency: 250MHz
- Height: 900μm
- Max Power Dissipation: 330mW
- hFE Min: 110
- Current - Collector Cutoff (Max): 15nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA 5V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- Contact Plating: Tin
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Qualification Status: Not Qualified
- Published: 2005
- Element Configuration: Single
- Collector Emitter Breakdown Voltage: 30V
- Collector Base Voltage (VCBO): 30V
- Part Status: Not For New Designs
- Current Rating: 100mA
- Length: 2.9mm
- Transistor Application: SWITCHING
- Polarity/Channel Type: NPN
- Frequency: 250MHz
- Gain Bandwidth Product: 250MHz
- Operating Temperature: 150°C TJ
- Power Dissipation: 330mW
- Collector Emitter Saturation Voltage: 600mV
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Base Part Number: BC848
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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