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- Manufacturer No：IXFK90N20
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXFK90N20
- SKU：3910802
- Description：MOSFET N-CH 200V 90A TO-264AA
User Guide
User Guide
IXFK90N20 Details
MOSFET N-CH 200V 90A TO-264AA
IXFK90N20 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Factory Lead Time: 8 Weeks
- Number of Terminations: 3
- Pin Count: 3
- REACH SVHC: No SVHC
- Drain to Source Breakdown Voltage: 200V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Part Status: Not For New Designs
- Published: 2000
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Power Dissipation: 500W
- Subcategory: FET General Purpose Power
- Turn-Off Delay Time: 75 ns
- Current Rating: 90A
- Rise Time: 80 ns
- Series: HiPerFET?
- Current - Continuous Drain (Id) @ 25°C: 90A Tc
- Vgs(th) (Max) @ Id: 4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- Lead Free: Lead Free
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Packaging: Tube
- Number of Pins: 3
- Qualification Status: Not Qualified
- Voltage - Rated DC: 200V
- Dual Supply Voltage: 200V
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Threshold Voltage: 4V
- Operating Mode: ENHANCEMENT MODE
- Resistance: 20mOhm
- Case Connection: DRAIN
- Fall Time (Typ): 30 ns
- Additional Feature: AVALANCHE RATED
- Continuous Drain Current (ID): 90A
- Nominal Vgs: 4 V
- Package / Case: TO-264-3, TO-264AA
- Power Dissipation-Max: 500W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V
- Rds On (Max) @ Id, Vgs: 23m Ω @ 45A, 10V
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