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IPA60R099P7XKSA1123
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IPA60R099P7XKSA1
  • Manufacturer No:
    IPA60R099P7XKSA1
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IPA60R099P7XKSA1
  • SKU:
    2659169
  • Description:
    MOSFET N-CHANNEL 600V 31A TO220

IPA60R099P7XKSA1 Details

MOSFET N-CHANNEL 600V 31A TO220

IPA60R099P7XKSA1 Specification Parameters

  • Part Status: Active
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • ECCN Code: EAR99
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Packaging: Tube
  • Published: 2014
  • Terminal Finish: Tin (Sn)
  • Factory Lead Time: 18 Weeks
  • DS Breakdown Voltage-Min: 600V
  • Operating Temperature: -55°C~150°C TJ
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • JESD-30 Code: R-PSFM-T3
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Current - Continuous Drain (Id) @ 25°C: 31A Tc
  • Power Dissipation-Max: 29W Tc
  • Vgs(th) (Max) @ Id: 4V @ 530μA
  • Rds On (Max) @ Id, Vgs: 99m Ω @ 10.5A, 10V
  • Surface Mount: NO
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Number of Elements: 1
  • JESD-609 Code: e3
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Number of Terminations: 3
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Transistor Element Material: SILICON
  • Drain to Source Voltage (Vdss): 600V
  • Terminal Position: SINGLE
  • Case Connection: ISOLATED
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Pulsed Drain Current-Max (IDM): 100A
  • JEDEC-95 Code: TO-220AB
  • Package / Case: TO-220-3 Full Pack
  • Series: CoolMOS? P7
  • Drain-source On Resistance-Max: 0.099Ohm
  • Avalanche Energy Rating (Eas): 105 mJ
  • Input Capacitance (Ciss) (Max) @ Vds: 1952pF @ 400V

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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