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- Manufacturer No：IPA60R360P7SXKSA1
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IPA60R360P7SXKSA1
- SKU：2652063
- Description：N-Channel 600 V 9A (Tc) 22W (Tc) Through Hole PG-TO220-FP
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User Guide
IPA60R360P7SXKSA1 Details
N-Channel 600 V 9A (Tc) 22W (Tc) Through Hole PG-TO220-FP
IPA60R360P7SXKSA1 Specification Parameters
- Part Status: Active
- RoHS Status: ROHS3 Compliant
- Number of Elements: 1
- JESD-609 Code: e3
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Published: 2014
- Terminal Finish: Tin (Sn)
- Factory Lead Time: 18 Weeks
- DS Breakdown Voltage-Min: 600V
- Case Connection: ISOLATED
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Configuration: SINGLE WITH BUILT-IN DIODE
- JEDEC-95 Code: TO-220AB
- Package / Case: TO-220-3 Full Pack
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Series: CoolMOS? P7
- Vgs(th) (Max) @ Id: 4V @ 140μA
- Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 400V
- Rds On (Max) @ Id, Vgs: 360m Ω @ 2.7A, 10V
- Surface Mount: NO
- Mounting Type: Through Hole
- ECCN Code: EAR99
- Moisture Sensitivity Level (MSL): Not Applicable
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 600V
- Terminal Position: SINGLE
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Operating Temperature: -40°C~150°C TJ
- JESD-30 Code: R-PSFM-T3
- Pulsed Drain Current-Max (IDM): 26A
- Current - Continuous Drain (Id) @ 25°C: 9A Tc
- Drain-source On Resistance-Max: 0.36Ohm
- Power Dissipation-Max: 22W Tc
- Avalanche Energy Rating (Eas): 27 mJ
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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