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- Manufacturer No：IPB60R190P6ATMA1
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IPB60R190P6ATMA1
- SKU：2667114
- Description：N-Channel 600 V 20.2A (Tc) 151W (Tc) Surface Mount D?PAK (TO-263AB)
User Guide
User Guide
IPB60R190P6ATMA1 Details
N-Channel 600 V 20.2A (Tc) 151W (Tc) Surface Mount D?PAK (TO-263AB)
IPB60R190P6ATMA1 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Part Status: Obsolete
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Lead Free: Contains Lead
- Published: 2008
- Transistor Element Material: SILICON
- Terminal Position: SINGLE
- Packaging: Cut Tape (CT)
- Technology: MOSFET (Metal Oxide)
- Halogen Free: Halogen Free
- Vgs (Max): ±20V
- Configuration: SINGLE WITH BUILT-IN DIODE
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drain-source On Resistance-Max: 0.19Ohm
- Continuous Drain Current (ID): 20.2A
- Power Dissipation-Max: 151W Tc
- Vgs(th) (Max) @ Id: 4.5V @ 630μA
- Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 100V
- Number of Terminations: 2
- Mount: Surface Mount
- RoHS Status: RoHS Compliant
- Pbfree Code: yes
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Factory Lead Time: 12 Weeks
- Terminal Form: GULL WING
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Max Dual Supply Voltage: 600V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- JESD-30 Code: R-PSSO-G2
- Case Connection: DRAIN
- Pulsed Drain Current-Max (IDM): 57A
- Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
- Series: CoolMOS? P6
- Current - Continuous Drain (Id) @ 25°C: 20.2A Tc
- Avalanche Energy Rating (Eas): 419 mJ
- Rds On (Max) @ Id, Vgs: 190m Ω @ 7.6A, 10V
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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