Add to like
Add to project list
IPD12CN10NGATMA1123
Inventory:7213
  • Qty Unit Price price
  • 1 $2.322 $2.322
  • 10 $2.299 $22.99
  • 100 $2.276 $227.6
  • 1000 $2.253 $2253
  • 10000 $2.23 $22300

Not the price you want? Send RFQ Now and we'll contact you ASAP

IPD12CN10NGATMA1
  • Manufacturer No:
    IPD12CN10NGATMA1
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IPD12CN10NGATMA1
  • SKU:
    2670261
  • Description:
    Trans MOSFET N-CH 100V 67A 3-Pin TO-252 T/R

IPD12CN10NGATMA1 Details

Trans MOSFET N-CH 100V 67A 3-Pin TO-252 T/R

IPD12CN10NGATMA1 Specification Parameters

  • Part Status: Active
  • Number of Terminations: 2
  • Mount: Surface Mount
  • Number of Elements: 1
  • JESD-609 Code: e3
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Number of Pins: 3
  • Terminal Form: GULL WING
  • Drain to Source Breakdown Voltage: 100V
  • Moisture Sensitivity Level (MSL): 3 (168 Hours)
  • Reach Compliance Code: not_compliant
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Factory Lead Time: 18 Weeks
  • Gate to Source Voltage (Vgs): 20V
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature: -55°C~175°C TJ
  • Operating Mode: ENHANCEMENT MODE
  • JESD-30 Code: R-PSSO-G2
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Series: OptiMOS?
  • Turn On Delay Time: 17 ns
  • Turn-Off Delay Time: 32 ns
  • Power Dissipation-Max: 125W Tc
  • Continuous Drain Current (ID): 67A
  • Current - Continuous Drain (Id) @ 25°C: 67A Tc
  • Vgs(th) (Max) @ Id: 4V @ 83μA
  • Avalanche Energy Rating (Eas): 154 mJ
  • Rds On (Max) @ Id, Vgs: 12.4m Ω @ 67A, 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Pbfree Code: yes
  • Contact Plating: Tin
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Lead Free: Contains Lead
  • REACH SVHC: No SVHC
  • Max Dual Supply Voltage: 100V
  • Threshold Voltage: 3V
  • Published: 2008
  • Transistor Element Material: SILICON
  • Element Configuration: Single
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Halogen Free: Halogen Free
  • Vgs (Max): ±20V
  • Case Connection: DRAIN
  • Fall Time (Typ): 8 ns
  • JEDEC-95 Code: TO-252AA
  • Power Dissipation: 125W
  • Rise Time: 21 ns
  • Additional Feature: FAST SWITCHING
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Pulsed Drain Current-Max (IDM): 268A
  • Drain-source On Resistance-Max: 0.0124Ohm
  • Input Capacitance (Ciss) (Max) @ Vds: 4320pF @ 50V

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

Excellent

Based on reviews

Excellent

Based on reviews

LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.
Our social media
We support logistics
We Accept Payment Via