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- Manufacturer No：IPD50R280CEBTMA1
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IPD50R280CEBTMA1
- SKU：2659773
- Description：MOSFET N-CH 500V 13A PG-TO252
User Guide
User Guide
IPD50R280CEBTMA1 Details
MOSFET N-CH 500V 13A PG-TO252
IPD50R280CEBTMA1 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Surface Mount: YES
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Pbfree Code: no
- Published: 2015
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 500V
- Part Status: Discontinued
- Packaging: Cut Tape (CT)
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- JESD-30 Code: R-PSSO-G2
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Series: CoolMOS?
- Current - Continuous Drain (Id) @ 25°C: 13A Tc
- Power Dissipation-Max: 92W Tc
- Vgs(th) (Max) @ Id: 3.5V @ 350μA
- Input Capacitance (Ciss) (Max) @ Vds: 773pF @ 100V
- Avalanche Energy Rating (Eas): 231 mJ
- Number of Terminations: 2
- Number of Elements: 1
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Factory Lead Time: 6 Weeks
- Terminal Form: GULL WING
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Terminal Position: SINGLE
- DS Breakdown Voltage-Min: 500V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Configuration: SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On): 13V
- FET Feature: Super Junction
- Drain-source On Resistance-Max: 0.28Ohm
- Pulsed Drain Current-Max (IDM): 42.9A
- Gate Charge (Qg) (Max) @ Vgs: 32.6nC @ 10V
- Rds On (Max) @ Id, Vgs: 280m Ω @ 4.2A, 13V
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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