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- Manufacturer No：IPD65R950CFDBTMA1
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IPD65R950CFDBTMA1
- SKU：2670572
- Description：MOSFET N-Ch 700V 3.9A DPAK-2
User Guide
User Guide
IPD65R950CFDBTMA1 Details
MOSFET N-Ch 700V 3.9A DPAK-2
IPD65R950CFDBTMA1 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Number of Elements: 1
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Pin Count: 3
- Terminal Form: GULL WING
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Terminal Position: SINGLE
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Factory Lead Time: 26 Weeks
- Additional Feature: HIGH RELIABILITY
- Configuration: SINGLE WITH BUILT-IN DIODE
- Subcategory: FET General Purpose Power
- DS Breakdown Voltage-Min: 650V
- Pulsed Drain Current-Max (IDM): 11A
- JEDEC-95 Code: TO-252AA
- Avalanche Energy Rating (Eas): 50 mJ
- Vgs(th) (Max) @ Id: 4.5V @ 200μA
- Rds On (Max) @ Id, Vgs: 950m Ω @ 1.5A, 10V
- Gate Charge (Qg) (Max) @ Vgs: 14.1nC @ 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Surface Mount: YES
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Pbfree Code: no
- Published: 2012
- Transistor Element Material: SILICON
- Part Status: Last Time Buy
- Packaging: Cut Tape (CT)
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±20V
- JESD-30 Code: R-PSSO-G2
- Case Connection: DRAIN
- Drain to Source Voltage (Vdss): 650V
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Drain Current-Max (Abs) (ID): 3.9A
- Series: CoolMOS?
- Drain-source On Resistance-Max: 0.95Ohm
- Current - Continuous Drain (Id) @ 25°C: 3.9A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 100V
- Power Dissipation-Max: 36.7W Tc
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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