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- Manufacturer No：IPP60R280P6XKSA1
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IPP60R280P6XKSA1
- SKU：2685272
- Description：INFINEON IPP60R280P6Power MOSFET, N Channel, 13.8 A, 600 V, 0.252 ohm, 10 V, 4 V
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User Guide
IPP60R280P6XKSA1 Details
INFINEON IPP60R280P6Power MOSFET, N Channel, 13.8 A, 600 V, 0.252 ohm, 10 V, 4 V
IPP60R280P6XKSA1 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- Min Operating Temperature: -55°C
- Number of Pins: 3
- Published: 2008
- Factory Lead Time: 18 Weeks
- Drain to Source Breakdown Voltage: 600V
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Halogen Free: Halogen Free
- Package / Case: TO-220-3
- Turn On Delay Time: 12 ns
- Turn-Off Delay Time: 36 ns
- Supplier Device Package: PG-TO220-3
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Power Dissipation: 104W
- Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V
- Drain to Source Resistance: 252mOhm
- Vgs(th) (Max) @ Id: 3.5V @ 430μA
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Lead Free: Lead Free
- Packaging: Tube
- Max Operating Temperature: 150°C
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Drain to Source Voltage (Vdss): 600V
- Max Dual Supply Voltage: 600V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Rise Time: 6ns
- Weight: 6.000006g
- Series: CoolMOS?
- Continuous Drain Current (ID): 13.8A
- Power Dissipation-Max: 104W Tc
- Rds On Max: 280 mΩ
- Current - Continuous Drain (Id) @ 25°C: 13.8A Tc
- Input Capacitance: 950pF
- Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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