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IPW60R280P6FKSA1123
Inventory:282
  • Qty Unit Price price
  • 1 $2.758 $2.758
  • 10 $2.73 $27.3
  • 100 $2.702 $270.2
  • 1000 $2.675 $2675
  • 10000 $2.648 $26480

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IPW60R280P6FKSA1
  • Manufacturer No:
    IPW60R280P6FKSA1
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IPW60R280P6FKSA1
  • SKU:
    2680851
  • Description:
    MOSFET N-CH 600V TO247-3

IPW60R280P6FKSA1 Details

MOSFET N-CH 600V TO247-3

IPW60R280P6FKSA1 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • Number of Channels: 1
  • Min Operating Temperature: -55°C
  • Number of Pins: 3
  • Published: 2008
  • Factory Lead Time: 18 Weeks
  • Max Dual Supply Voltage: 600V
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Rise Time: 6ns
  • Package / Case: TO-247-3
  • Weight: 38.000013g
  • Continuous Drain Current (ID): 13.8A
  • Power Dissipation: 104W
  • Series: CoolMOS? P6
  • Drain to Source Resistance: 252mOhm
  • Input Capacitance: 1.19nF
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Lead Free: Lead Free
  • Packaging: Tube
  • Max Operating Temperature: 150°C
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Drain to Source Voltage (Vdss): 600V
  • Gate to Source Voltage (Vgs): 20V
  • FET Type: N-Channel
  • Vgs (Max): ±20V
  • Turn On Delay Time: 12 ns
  • Turn-Off Delay Time: 36 ns
  • Supplier Device Package: PG-TO247-3
  • Power Dissipation-Max: 104W Tc
  • Rds On Max: 280 mΩ
  • Current - Continuous Drain (Id) @ 25°C: 13.8A Tc
  • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 100V
  • Gate Charge (Qg) (Max) @ Vgs: 25.5nC @ 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 430μA

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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