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- Manufacturer No：IPW60R125C6FKSA1
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IPW60R125C6FKSA1
- SKU：2670586
- Description：Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247
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User Guide
IPW60R125C6FKSA1 Details
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247
IPW60R125C6FKSA1 Specification Parameters
- Surface Mount: NO
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Elements: 1
- Pbfree Code: yes
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Pin Count: 3
- Published: 2011
- Terminal Finish: Tin (Sn)
- Drain to Source Voltage (Vdss): 600V
- Terminal Position: SINGLE
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- JESD-30 Code: R-PSFM-T3
- Series: CoolMOS?
- Pulsed Drain Current-Max (IDM): 89A
- Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
- Rds On (Max) @ Id, Vgs: 125m Ω @ 14.5A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 960μA
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- ECCN Code: EAR99
- JESD-609 Code: e3
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Qualification Status: Not Qualified
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Transistor Element Material: SILICON
- DS Breakdown Voltage-Min: 600V
- Part Status: Not For New Designs
- FET Type: N-Channel
- Drain Current-Max (Abs) (ID): 30A
- Operating Mode: ENHANCEMENT MODE
- Configuration: SINGLE WITH BUILT-IN DIODE
- Package / Case: TO-247-3
- Current - Continuous Drain (Id) @ 25°C: 30A Tc
- Drain-source On Resistance-Max: 0.125Ohm
- Power Dissipation-Max: 219W Tc
- Avalanche Energy Rating (Eas): 636 mJ
- Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 100V
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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