IRF6711STRPBFInfineon
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    Inventory:5281
    • Qty Unit Price price
    • 1 $1266.971 $1266.971
    • 10 $1254.426 $12544.26
    • 100 $1242.005 $124200.5
    • 1000 $1229.707 $1229707
    • 10000 $1217.531 $12175310

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    IRF6711STRPBF
    • Manufacturer No：
      IRF6711STRPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRF6711STRPBF
    • SKU：
      2694534
    • Description：
      MOSFET N-CH 25V 19A DIRECTFET-SQ

    User Guide

    User Guide

    IRF6711STRPBF Details

    MOSFET N-CH 25V 19A DIRECTFET-SQ

    IRF6711STRPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • Radiation Hardening: No
    • Number of Pins: 5
    • Published: 2009
    • Gate to Source Voltage (Vgs): 20V
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Factory Lead Time: 26 Weeks
    • Configuration: SINGLE WITH BUILT-IN DIODE
    • Operating Temperature: -40°C~150°C TJ
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Continuous Drain Current (ID): 19A
    • Length: 4.826mm
    • Width: 3.95mm
    • Turn-Off Delay Time: 7.1 ns
    • Drain Current-Max (Abs) (ID): 84A
    • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
    • Power Dissipation-Max: 2.2W Ta 42W Tc
    • Package / Case: DirectFET? Isometric SQ
    • JESD-30 Code: R-XBCC-N4
    • Current - Continuous Drain (Id) @ 25°C: 19A Ta 84A Tc
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • Number of Terminations: 4
    • Drain to Source Breakdown Voltage: 25V
    • Transistor Element Material: SILICON
    • Terminal Position: BOTTOM
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Vgs (Max): ±20V
    • Case Connection: DRAIN
    • Subcategory: FET General Purpose Power
    • Series: HEXFET?
    • Rise Time: 13 ns
    • Fall Time (Typ): 5.4 ns
    • Power Dissipation: 42W
    • Turn On Delay Time: 7.7 ns
    • Vgs(th) (Max) @ Id: 2.35V @ 25μA
    • Height: 506μm
    • Drain-source On Resistance-Max: 0.0038Ohm
    • Avalanche Energy Rating (Eas): 62 mJ
    • Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 13V
    • Rds On (Max) @ Id, Vgs: 3.8m Ω @ 19A, 10V
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    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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