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- Manufacturer No：IRF7207PBF
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF7207PBF
- SKU：2687447
- Description：MOSFET P-CH 20V 5.4A 8-SOIC
User Guide
User Guide
IRF7207PBF Details
MOSFET P-CH 20V 5.4A 8-SOIC
IRF7207PBF Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- RoHS Status: RoHS Compliant
- Lead Free: Lead Free
- Part Status: Obsolete
- Packaging: Tube
- Gate to Source Voltage (Vgs): 12V
- Drain to Source Voltage (Vdss): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- FET Type: P-Channel
- Drain to Source Resistance: 60mOhm
- Drain to Source Breakdown Voltage: -20V
- Vgs (Max): ±12V
- Turn-Off Delay Time: 43 ns
- Rise Time: 24ns
- Vgs(th) (Max) @ Id: 700mV @ 250μA
- Drive Voltage (Max Rds On,Min Rds On): 2.7V 4.5V
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
- Current Rating: -5.4A
- Rds On (Max) @ Id, Vgs: 60mOhm @ 5.4A, 4.5V
- Mounting Type: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Number of Pins: 8
- REACH SVHC: No SVHC
- Max Operating Temperature: 150°C
- Published: 2004
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Power Dissipation: 2.5W
- Series: HEXFET?
- Turn On Delay Time: 11 ns
- Voltage - Rated DC: -20V
- Supplier Device Package: 8-SO
- Fall Time (Typ): 41 ns
- Threshold Voltage: -700mV
- Rds On Max: 60 mΩ
- Power Dissipation-Max: 2.5W Tc
- Current - Continuous Drain (Id) @ 25°C: 5.4A Tc
- Input Capacitance: 780pF
- Continuous Drain Current (ID): -5.4A
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Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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