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IRF7326D2PBF123
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IRF7326D2PBF
  • Manufacturer No:
    IRF7326D2PBF
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRF7326D2PBF
  • SKU:
    2701374
  • Description:
    MOSFET P-CH 30V 3.6A 8-SOIC

IRF7326D2PBF Details

MOSFET P-CH 30V 3.6A 8-SOIC

IRF7326D2PBF Specification Parameters

  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • RoHS Status: RoHS Compliant
  • Lead Free: Lead Free
  • Part Status: Obsolete
  • Packaging: Tube
  • Max Operating Temperature: 150°C
  • Gate to Source Voltage (Vgs): 20V
  • Published: 2004
  • Package / Case: 8-SOIC (0.154, 3.90mm Width)
  • Vgs (Max): ±20V
  • Turn-Off Delay Time: 25 ns
  • Fall Time (Typ): 18 ns
  • Drain to Source Breakdown Voltage: -30V
  • Vgs(th) (Max) @ Id: 1V @ 250μA
  • Threshold Voltage: -1V
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Rise Time: 17ns
  • Input Capacitance: 440pF
  • Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
  • Current Rating: -3.6A
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V
  • Mounting Type: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • Min Operating Temperature: -55°C
  • Number of Pins: 8
  • REACH SVHC: No SVHC
  • Power Dissipation: 2W
  • Drain to Source Voltage (Vdss): 30V
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • FET Type: P-Channel
  • Drain to Source Resistance: 160mOhm
  • Voltage - Rated DC: -30V
  • Supplier Device Package: 8-SO
  • Rds On Max: 100 mΩ
  • Power Dissipation-Max: 2W Ta
  • FET Feature: Schottky Diode (Isolated)
  • Series: FETKY?
  • Current - Continuous Drain (Id) @ 25°C: 3.6A Ta
  • Continuous Drain Current (ID): -3.6A

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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