SI4831BDY-T1-E3
Vishay Siliconix
RoHS Status
ROHS3 CompliantMoisture Sensitivity Level (MSL)
1 (Unlimited)Mounting Type
Surface MountMount
Surface MountPackaging
Tape & Reel (TR)Number of Elements
1Number of Channels
1Min Operating Temperature
-55°CPart Status
ObsoleteNumber of Pins
8Published
2016Max Operating Temperature
150°CLength
5mmPower Dissipation
2WGate to Source Voltage (Vgs)
20VDrain to Source Voltage (Vdss)
30VWidth
4mmOperating Temperature
-55°C~150°C TJPackage / Case
8-SOIC (0.154, 3.90mm Width)Technology
MOSFET (Metal Oxide)Height
1.5mmVgs (Max)
±20VDrive Voltage (Max Rds On,Min Rds On)
4.5V 10VRise Time
8nsFET Type
P-ChannelTurn On Delay Time
8 nsFall Time (Typ)
7 nsVgs(th) (Max) @ Id
3V @ 250μADrain to Source Breakdown Voltage
-30VTurn-Off Delay Time
24 nsSupplier Device Package
8-SODrain to Source Resistance
42mOhmWeight
186.993455mgFET Feature
Schottky Diode (Isolated)Gate Charge (Qg) (Max) @ Vgs
26nC @ 10VSeries
LITTLE FOOT?Rds On Max
42 mΩCurrent - Continuous Drain (Id) @ 25°C
6.6A TcInput Capacitance
625pFPower Dissipation-Max
2W Ta 3.3W TcContinuous Drain Current (ID)
-6.6ARds On (Max) @ Id, Vgs
42mOhm @ 5A, 10VInput Capacitance (Ciss) (Max) @ Vds
625pF @ 15V