IRF7452PBFInfineon
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    IRF7452PBF
    • Manufacturer No：
      IRF7452PBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRF7452PBF
    • SKU：
      2703806
    • Description：
      MOSFET N-CH 100V 4.5A 8-SOIC

    User Guide

    User Guide

    IRF7452PBF Details

    MOSFET N-CH 100V 4.5A 8-SOIC

    IRF7452PBF Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Number of Elements: 1
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Terminations: 8
    • Packaging: Tube
    • REACH SVHC: No SVHC
    • Drain to Source Breakdown Voltage: 100V
    • Terminal Finish: Matte Tin (Sn)
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Part Status: Discontinued
    • Operating Temperature: -55°C~150°C TJ
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Subcategory: FET General Purpose Power
    • Continuous Drain Current (ID): 4.5A
    • Vgs (Max): ±30V
    • Height: 1.4986mm
    • Resistance: 60mOhm
    • Rise Time: 11 ns
    • Recovery Time: 120 ns
    • Pulsed Drain Current-Max (IDM): 36A
    • Power Dissipation-Max: 2.5W Ta
    • Avalanche Energy Rating (Eas): 200 mJ
    • Vgs(th) (Max) @ Id: 5.5V @ 250μA
    • Current - Continuous Drain (Id) @ 25°C: 4.5A Ta
    • Rds On (Max) @ Id, Vgs: 60m Ω @ 2.7A, 10V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Number of Pins: 8
    • Terminal Position: DUAL
    • Terminal Form: GULL WING
    • Voltage - Rated DC: 100V
    • Dual Supply Voltage: 100V
    • Threshold Voltage: 5.5V
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 30V
    • Published: 2001
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Current Rating: 4.5A
    • Power Dissipation: 2.5W
    • Width: 3.9878mm
    • Series: HEXFET?
    • Fall Time (Typ): 13 ns
    • Turn-Off Delay Time: 16 ns
    • Turn On Delay Time: 9.5 ns
    • Factory Lead Time: 39 Weeks
    • Length: 4.9784mm
    • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
    • Nominal Vgs: 5.5 V
    • Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V
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    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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