IRF7473TRPBFInfineon
    Add to like
    Add to project list
    IRF7473TRPBF123
    Inventory:5784
    • Qty Unit Price price
    • 1 $1.292 $1.292
    • 10 $1.279 $12.79
    • 100 $1.266 $126.6
    • 1000 $1.253 $1253
    • 10000 $1.24 $12400

    Not the price you want? Send RFQ Now and we'll contact you ASAP

    IRF7473TRPBF
    • Manufacturer No：
      IRF7473TRPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRF7473TRPBF
    • SKU：
      2730225
    • Description：
      MOSFET N-CH 100V 6.9A 8-SOIC

    User Guide

    User Guide

    IRF7473TRPBF Details

    MOSFET N-CH 100V 6.9A 8-SOIC

    IRF7473TRPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • Radiation Hardening: No
    • Number of Pins: 8
    • Terminal Position: DUAL
    • Terminal Form: GULL WING
    • REACH SVHC: No SVHC
    • Voltage - Rated DC: 100V
    • Dual Supply Voltage: 100V
    • Time@Peak Reflow Temperature-Max (s): 30
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Published: 2004
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Power Dissipation: 2.5W
    • Width: 3.9878mm
    • Series: HEXFET?
    • Continuous Drain Current (ID): 6.9A
    • Pulsed Drain Current-Max (IDM): 55A
    • Turn-Off Delay Time: 29 ns
    • Power Dissipation-Max: 2.5W Ta
    • Vgs(th) (Max) @ Id: 5.5V @ 250μA
    • Nominal Vgs: 5.5 V
    • Drain-source On Resistance-Max: 0.026Ohm
    • Current - Continuous Drain (Id) @ 25°C: 6.9A Ta
    • Input Capacitance (Ciss) (Max) @ Vds: 3180pF @ 25V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Number of Terminations: 8
    • Factory Lead Time: 12 Weeks
    • Termination: SMD/SMT
    • Peak Reflow Temperature (Cel): 260
    • Drain to Source Breakdown Voltage: 100V
    • Terminal Finish: Matte Tin (Sn)
    • Threshold Voltage: 5.5V
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Operating Temperature: -55°C~150°C TJ
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Vgs (Max): ±20V
    • Rise Time: 20 ns
    • Height: 1.4986mm
    • Current Rating: 6.9A
    • Fall Time (Typ): 11 ns
    • Turn On Delay Time: 24 ns
    • Lead Free: Contains Lead, Lead Free
    • Length: 4.9784mm
    • Additional Feature: ULTRA LOW RESISTANCE
    • Row Spacing: 6.3 mm
    • Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
    • Rds On (Max) @ Id, Vgs: 26m Ω @ 4.1A, 10V
    Search for similar products

    IRF7473TRPBF Similar Products

    The four parts on the right have similar specifications to Infineon & IRF7473TRPBF

    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

    Hot Search

    Excellent

    Based on reviews

    Excellent

    Based on reviews

    LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.

    About Us

    Support

    Quick Links

    Contact Us

    Our social media
    We support logistics
    We Accept Payment Via