IRF7465TRPBFInfineon
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    IRF7465TRPBF123
    Inventory:19428
    • Qty Unit Price price
    • 1 $157.134 $157.134
    • 10 $155.578 $1555.78
    • 100 $154.037 $15403.7
    • 1000 $152.511 $152511
    • 10000 $151 $1510000

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    IRF7465TRPBF
    • Manufacturer No：
      IRF7465TRPBF
    • Manufacturer：
      Infineon
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRF7465TRPBF
    • SKU：
      2703173
    • Description：
      MOSFET N-CH 150V 1.9A 8SOIC

    User Guide

    User Guide

    IRF7465TRPBF Details

    MOSFET N-CH 150V 1.9A 8SOIC

    IRF7465TRPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • Radiation Hardening: No
    • Number of Pins: 8
    • Terminal Position: DUAL
    • Terminal Form: GULL WING
    • REACH SVHC: No SVHC
    • Drain to Source Breakdown Voltage: 150V
    • Threshold Voltage: 5.5V
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 30V
    • Operating Temperature: -55°C~150°C TJ
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Turn-Off Delay Time: 10 ns
    • Vgs (Max): ±30V
    • Height: 1.4986mm
    • Continuous Drain Current (ID): 1.9A
    • Turn On Delay Time: 7 ns
    • Resistance: 280mOhm
    • Power Dissipation-Max: 2.5W Ta
    • Rise Time: 1.2 ns
    • Vgs(th) (Max) @ Id: 5.5V @ 250μA
    • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
    • Rds On (Max) @ Id, Vgs: 280m Ω @ 1.14A, 10V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • Contact Plating: Tin
    • Number of Terminations: 8
    • Factory Lead Time: 12 Weeks
    • Termination: SMD/SMT
    • Voltage - Rated DC: 150V
    • Dual Supply Voltage: 150V
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Published: 2001
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Power Dissipation: 2.5W
    • Width: 3.9878mm
    • Current Rating: 1.9A
    • Series: HEXFET?
    • Fall Time (Typ): 9 ns
    • Lead Free: Contains Lead, Lead Free
    • Length: 4.9784mm
    • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
    • Nominal Vgs: 5.5 V
    • Current - Continuous Drain (Id) @ 25°C: 1.9A Ta
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    Infineon — Manufacturer Introduction

    Infineon
    Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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