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- Manufacturer No：IRF7495TR
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF7495TR
- SKU：2688609
- Description：MOSFET N-CH 100V 7.3A 8-SOIC
User Guide
User Guide
IRF7495TR Details
MOSFET N-CH 100V 7.3A 8-SOIC
IRF7495TR Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- JESD-609 Code: e3
- Number of Pins: 8
- Terminal Position: DUAL
- Terminal Form: GULL WING
- Voltage - Rated DC: 100V
- Terminal Finish: Matte Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Subcategory: FET General Purpose Power
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Current Rating: 7.3A
- Power Dissipation-Max: 2.5W Ta
- Drain-source On Resistance-Max: 0.022Ohm
- Current - Continuous Drain (Id) @ 25°C: 7.3A Ta
- Rds On (Max) @ Id, Vgs: 22m Ω @ 4.4A, 10V
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Number of Terminations: 8
- Lead Free: Contains Lead
- Peak Reflow Temperature (Cel): 260
- Drain to Source Breakdown Voltage: 100V
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- Published: 2003
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Configuration: SINGLE WITH BUILT-IN DIODE
- Power Dissipation: 2.5W
- Series: HEXFET?
- Continuous Drain Current (ID): 7.3A
- Rise Time: 13ns
- Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 25V
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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